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Investigation of Metal/GaAs Reactions by Heavy Ion Rutherford Backscattering Spectrometry(HIRBS)

Published online by Cambridge University Press:  25 February 2011

Kin Man Yu ,
J. M. Jaklevic  and
E. E. Haller
Kin Man Yu
Affiliation:
Center for Advanced Materials
J. M. Jaklevic
Affiliation:
Department of Instrument Science and Engineering, Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720.
E. E. Haller
Affiliation:
Center for Advanced Materials
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Abstract

Thermally activated metallurgical reactions between GaAs and various metals of potential importance in contact structures were studied using Heavy Ion Rutherford Backscattering Spectrometry (HIRBS). The improved mass resolution obtained with heavy ions (160) as projectiles for backscattering measurements facilitated the identification of the various intermetallic compounds formed on GaAs. The metal/GaAs systems investigated in this study included Pt/GaAs, Pd/GaAs, and Ni/GaAs. Three different binary compounds were formed in the Pt/GaAs system during annealing. Complete reaction between 1200Å of Pt and GaAs was observed after annealing at 500°C for 20 min. Reactions in Pd/GaAs and Ni/GaAs systems were, however, very different from that of Pt/GaAs. Both Pd and Ni formed ternary compounds with GaAs. Detailed information on the various compound compositions of the three systems as measured by HIRBS is presented. Comparisons of results on similar systems obtained by using other analytical techniques are discussed.

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Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 281
Copyright
Copyright © Materials Research Society 1986

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