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Investigation of Low Molecular Weight Carbosilanes as Potential Single-Source Precursors to Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

M. A. Lienhard ,
L. V. Interrante  and
D. J. Larkin
M. A. Lienhard
Affiliation:
Dept of Chemistry, R.P.I., Troy, NY 12180
L. V. Interrante
Affiliation:
Dept of Chemistry, R.P.I., Troy, NY 12180
D. J. Larkin
Affiliation:
NASA LeRC, MS.77–1, Cleveland, OH. 44135
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Abstract

Several volatile, low molecular weight, linear and cyclic carbosilanes containing a 1:1 Si:C ratio were studied as single-source CVD precursors to SiC. A comparison of methylsilane, 1,3-disilacyclobutane, 1,3-disila-n-butane, and 1,3,5-trisilacyclohexane in terms of both their pyrolysis chemistry (decomposition onset temperatures and gaseous by-products) and resulting film characterization (growth rate, stoichiometry, crystallinity and morphology) is presented. Polycrystalline β-SiC films were deposited by LPCVD on Si (100) substrates at temperatures ranging from 800°C to 1100°C by using each of these single-source precursors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 139
Copyright
Copyright © Materials Research Society 1998

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