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Investigation of Local Structures Around Mn Atoms in In1-xMnxAs Diluted Magnetic Semiconductors Using Exafs

Published online by Cambridge University Press:  15 February 2011

Y. L. Soo ,
S. W. Huang ,
Z. H. Ming ,
Y. H. Kao ,
H. Munekata  and
L. L Chang
Y. L. Soo
Affiliation:
Department of physics, state University of New York at Buffalo, Amherst, New York, 14260
S. W. Huang
Affiliation:
Department of physics, state University of New York at Buffalo, Amherst, New York, 14260
Z. H. Ming
Affiliation:
Department of physics, state University of New York at Buffalo, Amherst, New York, 14260
Y. H. Kao
Affiliation:
Department of physics, state University of New York at Buffalo, Amherst, New York, 14260
H. Munekata
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Japan
L. L Chang
Affiliation:
Hong Kong University of Science and Technology, Kowloon, Hong Kong
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Abstract

Extended x-ray absorption fine structure (EXAFS) techniques have been used to investigate the local structures in Inl-xMnxAs films grown by molecular beam epitaxy (MBE) under different processing conditions. For samples grown at low substrate temperatures (near 200°C) or with a low Mn concentration (about 1 atomic%), the Mn atoms can substitute for In in the InAs host, thus indicating that III-V diluted magnetic semiconductors (DMS) can indeed be prepared by substitutional doping of magnetic impurities. On the other hand, substitution dose not take place in high Mn concentration (above 10%) samples grown at high substrate temperatures (around 300°C); these samples contain a large amount of MnAs clusters and become ferromagnetic

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 375: Symposia AA – Applications of Synchrotron Radiation Techniques to Materials Science , 1994 , 27
Copyright
Copyright © Materials Research Society 1995

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