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Investigation of Fluorine Effect on the Boron Diffusion by Mean of Boron Redistribution in Shallow Delta-doped Layers

Published online by Cambridge University Press:  17 March 2011

A. Halimaoui ,
J. M. Hartmann ,
C. Laviron ,
R. El-Farhane  and
F. Laugier
A. Halimaoui
Affiliation:
STMicroelectronics
J. M. Hartmann
Affiliation:
CEA-LETI, 17 rue des Martyrs 38054 Grenoble Cedex, France
C. Laviron
Affiliation:
CEA-LETI, 17 rue des Martyrs 38054 Grenoble Cedex, France
R. El-Farhane
Affiliation:
Philips, 850 rue Jean Monnet 38926 Crolles Cedex, France
F. Laugier
Affiliation:
CEA-LETI, 17 rue des Martyrs 38054 Grenoble Cedex, France
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Abstract

Previously published articles have shown that co-implanted fluorine reduces transient enhanced diffusion of boron. However, it is not yet elucidated whether this effect is due to interaction of fluorine with point-defects or boron atoms. In this work, we have used boron redistribution in a shallow Delta-doped Si structures in order to get some insights into the role of fluorine in the boron diffusion. The structures consisted of 3 boron-doped layers separated by 40nm-thick undoped silicon. The samples were given to Ge preamorphization and F co-implant. SIMS depth profiling was used to analyse boron redistribution after annealing. The results we obtained strongly suggest that fluorine is not interacting with point-defects. The reduction in boron TED is most probably due to boron-fluorine interaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C3.10
Copyright
Copyright © Materials Research Society 2004

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References

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