Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-27T01:44:01.459Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of Fired and Non-fired Si-SiNx Interface Properties by Deep-level Transient Spectroscopy measurements

Published online by Cambridge University Press:  31 January 2011

Chun Gong ,
Eddy Simoen ,
Rui Yang ,
Niels Posthuma ,
Emmanuel Van Kerschaver ,
Jef Poortmans  and
Robert Mertens
Chun Gong
Affiliation:
[email protected], IMEC, PV, Leuven, Belgium
Eddy Simoen
Affiliation:
[email protected], IMEC, Leuven, Belgium
Rui Yang
Affiliation:
[email protected], IMEC, Leuven, Belgium
Niels Posthuma
Affiliation:
[email protected], IMEC, PV, Leuven, Belgium
Emmanuel Van Kerschaver
Affiliation:
[email protected], IMEC, PV, Leuven, Belgium
Jef Poortmans
Affiliation:
[email protected], IMEC, PV, Leuven, Belgium
Robert Mertens
Affiliation:
[email protected], IMEC, Leuven, Belgium
Get access

Abstract

In this paper, fired and non-fired direct PECVD deposited Si-SiNx interface properties with and without NH3 pretreatment on both n- and p-type mono-crystalline silicon samples were investigated with deep-level transient spectroscopy (DLTS) measurements. A and B defect states are identified at the Si-SiNx interface. Energy-dependent electron and hole capture cross sections were measured by small-pulse DLTS. Fired samples with NH3 pretreatment show the lowest DLTS signals, which suggests the lowest overall Dit. The combination of NH3 pretreatment and firing is also suggested for application in the solar cell fabrication.

Keywords

deep level transient spectroscopy (DLTS)passivationdielectric properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1210: Symposium Q – Photovoltaic Materials and Manufacturing Issues II , 2009 , 1210-Q05-04
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Agnihotri, O.P. et al., Semicond. Sci. Technol., 15, R29 (2000).Google Scholar
[2] Wolf, S. De et al., J. Appl. Phys., 97, 063303 (2005).Google Scholar
[3] Aberle, A.G. et al., J. Appl. Phys., 71, 4422 (1992).Google Scholar
[4] Schmidt, J. et al., Appl. Phys. Lett., 71, 252 (1997).Google Scholar
[5] Schmidt, J. et al., J. Appl. Phys., 85, 3626 (1999).Google Scholar
[6] Jeon, I.S. et al., Appl. Phys. Lett., 82, pp. 1066 (2003).Google Scholar
[7] Johnson, N.M. Appl. Phys. Lett., 34, 802 (1979).Google Scholar
[8] Murray, F. et al., J. Appl. Phys., 60, 3592 (1986).Google Scholar