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Investigation of Epitaxially Grown PbO, TiO2 and ZrO2 as Bridge Layers for Integration of PZT on GaN by MBE

Published online by Cambridge University Press:  26 February 2011

Xing Gu ,
Natalia Izyumskaya ,
Vataliy Avrutin  and
Hadis Morkoç
Xing Gu
Affiliation:
[email protected], Virginia Commonwealth University, Electrical Engineering, 601 W.Main Street, Dept.Electrical Engineering, Richmond, VA, 23284, United States
Natalia Izyumskaya
Affiliation:
[email protected], Virginia Commonwealth University, Electrical Engineering, 601 W.Main Street, Dept.Electrical Engineering, Richmond, VA, 23284, United States
Vataliy Avrutin
Affiliation:
[email protected], Virginia Commonwealth University, Electrical Engineering, 601 W.Main Street, Dept.Electrical Engineering, Richmond, VA, 23284, United States
Hadis Morkoç
Affiliation:
[email protected], Virginia Commonwealth University, Electrical Engineering, 601 W.Main Street, Dept. Electrical Engineering, Richmond, VA, 23284, United States
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Abstract

Epitaxial growth of PbO, TiO2 and ZrO2 has been achieved on MOCVD grown GaN template using oxides MBE with a reactive H2O2 oxygen source. In situ RHEED was used to monitor the growth in-situ. AFM was used to characterize the surface morphology of the thin PbO and ZrO2, which show streaky, 2-D RHEED patterns. XRD pattern indicates that the growth orientation of these oxides are PbO [111]//GaN [0002], ZrO2[100]//GaN [0002] and TiO2[200]//GaN[0002].

Keywords

epitaxythin filmferroelectricity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 966: Symposium T – Ferroelectrics and Multiferroics , 2006 , 0966-T07-06
Copyright
Copyright © Materials Research Society 2007

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References

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