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Investigation of Electronic Surface States and its Correlation to Surface Modifications in Femtosecond UV-Laser Treated n(100) GaAs

Published online by Cambridge University Press:  10 February 2011

T. A. Railkar ,
A. P. Malshe ,
W. D. Brown ,
S. S. Hullavarad  and
S. V. Bhoraskar
T. A. Railkar
Affiliation:
Materials and Manufacturing Research Laboratory (MRL), University of Arkansas, Fayetteville AR 72701
A. P. Malshe
Affiliation:
Materials and Manufacturing Research Laboratory (MRL), University of Arkansas, Fayetteville AR 72701
W. D. Brown
Affiliation:
Materials and Manufacturing Research Laboratory (MRL), University of Arkansas, Fayetteville AR 72701
S. S. Hullavarad
Affiliation:
Department of Physics, University of Pune, Pune 411007, INDIA
S. V. Bhoraskar
Affiliation:
Department of Physics, University of Pune, Pune 411007, INDIA
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Abstract

Gallium arsenide (GaAs) is an important III-V semiconductor, due to its applicability to several high-end and consumable electronic devices. However, GaAs, unlike silicon (Si), does not have a stable native oxide that can stabilize and protect the surface from further oxidation and degradation. In this paper, we report the use of femtosecond laser-based modification of the GaAs surface, leading to its stabilization against oxidation, the use of ultrafast laser-based processing and its effectiveness compared to conventional laser treatment. One of the prominent advantages of ultrafast lasers include an almost non-existent heat affected zone (HAZ). The surface stabilizing and passivating effects were confirmed by depth-profiling x-ray photoelectron spectroscopic (XPS) measurements, atomic force microscopy (AFM) measurements, and a surface sensitive spectroscopic technique called thermally stimulated exoelectron emission (TSEE) measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 585: Symposium L – Fundamental Mechanisms of Low-Energy-Beam Modified Surface , 1999 , 209
Copyright
Copyright © Materials Research Society 2000

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