Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-26T04:47:07.526Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of effects of ion beam irradiation on properties of magnesium oxide films

Published online by Cambridge University Press:  26 February 2011

Yasuhiko Morimoto ,
Yoshikazu Tanaka  and
Ari Ide-Ektessabi
Yasuhiko Morimoto
Affiliation:
[email protected], Kyoto University, Precision Engineering, Yoshidahonmachi, Sakyo-ku, Kyoto, N/A, 606-8501, Japan, +81-75-753-5259, +81-75-753-5259
Yoshikazu Tanaka
Affiliation:
[email protected], Kyoto University, Mechanical Engineering and Science, Japan
Ari Ide-Ektessabi
Affiliation:
[email protected], Kyoto University, International Innovation Center, Japan
Get access

Abstract

Magnesium oxide (MgO) film is commonly used as protecting layer for alternative current plasma display panels (AC-PDPs). Low energy ion induced secondary electron emission coefficient (γ) is one of the important factors to improve performance of AC-PDPs. The aim of this study is to prepare MgO films with high γ using ion beam assisted deposition (IBAD). The film composition, density, and crystal orientation were also investigated. The results suggest that MgO films with high γ can be obtained using IBAD. On the other hand, as the assisted ion beam energy increased to more than 500eV during deposition, (200)-oriented film with low γ grew preferentially and then the γ decreased.

Keywords

ion-beam assisted depositionion beam analysisfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO14-03
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Boeuf, J P, J. Phys. D: Appl. Phys. 36, R53 (2003).Google Scholar
2 Urade, T., Iemori, T., Osawa, M., Nakayama, N., and Morita, I., IEEE Trans. Electron Devices 23, 313 (1976).Google Scholar
3 Hur, M.S., Lee, J.K., Kim, H.C., and Kang, B.K., IEEE Trans. Plasma Science 29, 861 (2001).Google Scholar
4 Yoshida, K., Uchiike, H., and Sawa, M., IEICE Trans. Electron E82-C, 1798 (1999).Google Scholar
5 Moon, K.S., Lee, J., Whang, K.W., J. Appl. Phys. 86, 4049 (1999).Google Scholar
6 Koshida, N., and Yoshida, S., Appl. Phys. Lett. 32, 708 (1978).Google Scholar
7 Choi, E.H., Oh, H.J., Kim, Y.G., Ko, J.J., Lim, J.Y., Kim, J.G., Kim, D.I., Cho, G., and Kang, S.O., Jpn. J. Appl. Phys. 37, 7015 (1998).Google Scholar
8 Ektessabi, A.M., Sato, S., Kitamura, H., Masaki, Y., Vacuum 44, 213 (1993).Google Scholar
9 Ektessabi, A.M., Nucl. Instrum. Methods Phys. Res. B 99, 610 (1995).Google Scholar
10 Ide-Ektessabi, A., Nomura, H., Yasui, N., Tsukuda, Y., Thin Solid Films 447–448, 383 (2004).Google Scholar
11 Hagstrum, H.D., Phys. Review 122, 83 (1961).Google Scholar
12 Ziegler, J.F., Biersak, J.P., Littmark, U., The Stopping and Range of Ions in Matter, (Pergamon Press, 1985).Google Scholar
13 Oleszkiewicz, W., Romiszowski, P., Vacuum 70, 347 (2003).Google Scholar
14 Attard, G., Colin Barnes, , Surfaces, (Oxford Science Publications, Oxford, 1998) p. 62.Google Scholar