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Investigation of Diamond Particles Grown by Microwave Plasma CVD on Tungsten Wire Tips.

Published online by Cambridge University Press:  25 February 2011

Sue-Anne Stuart
Affiliation:
Department of Applied Physics and Microelectronics & Materials Technology Centre, Victoria University of Technology, (RMIT Campus), G.P.O Box 2476V Melbourne, Vic., 3001, Australia.
Steven Prawer
Affiliation:
Department of Applied Physics and Microelectronics & Materials Technology Centre, Victoria University of Technology, (RMIT Campus), G.P.O Box 2476V Melbourne, Vic., 3001, Australia.
Alon Hoffman
Affiliation:
Department of Applied Physics and Microelectronics & Materials Technology Centre, Victoria University of Technology, (RMIT Campus), G.P.O Box 2476V Melbourne, Vic., 3001, Australia.
Alec Moodie
Affiliation:
Department of Applied Physics and Microelectronics & Materials Technology Centre, Victoria University of Technology, (RMIT Campus), G.P.O Box 2476V Melbourne, Vic., 3001, Australia.
Paul Weiser
Affiliation:
Department of Applied Physics and Microelectronics & Materials Technology Centre, Victoria University of Technology, (RMIT Campus), G.P.O Box 2476V Melbourne, Vic., 3001, Australia.
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Abstract

Large diamond particles up to 30μm in diameter have been deposited on W wire tips using Microwave Plasma Chemical Vapour Deposition. Raman, SEM and TEM investigations were all carried out on a single particle. Large growth steps were observed on (100) facets but were absent on the (111) facets. Raman measurements indicated greater crystalline quality for (100) than (111) facets. TEM revealed the (111) facets to be covered with small islands of diamond about 10Å high. The dominant defect was found to be stacking faulting on the {111} planes which gives rise to some hexagonal spacings in the electron diffraction pattern. The results suggest that growth in the <111> and <100> directions are driven by different mechanisms.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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