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Investigation Of Deep Energy Levels In II-VI Compounds

Published online by Cambridge University Press:  15 February 2011

A. Castaldini ,
A. Cavallini ,
P. Fernandez ,
B. Fraboni  and
J. Piqueras
A. Castaldini
Affiliation:
INFM and Department of Physics, University of Bologna, Bologna, Italy
A. Cavallini
Affiliation:
INFM and Department of Physics, University of Bologna, Bologna, Italy
P. Fernandez
Affiliation:
Departamento de Fisica de Materiales, Facultad de Ciencias Fisicas, Universidad Complutense, 28040 Madrid, Spain
B. Fraboni
Affiliation:
INFM and Department of Physics, University of Bologna, Bologna, Italy
J. Piqueras
Affiliation:
Departamento de Fisica de Materiales, Facultad de Ciencias Fisicas, Universidad Complutense, 28040 Madrid, Spain
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Abstract

Deep levels in II-VI compounds have been investigated to understand their role in the compensation mechanism and their influence on the material electrical and optical properties. The electrical properties have been studied by current and capacitance transient spectroscopy, while the optical properties have been studied by cathodoluminescence. We have focused our attention on the traps involved in the compensation process, such as centre A and the deep levels located near midgap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 605
Copyright
Copyright © Materials Research Society 1997

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