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Investigation of Damage Induced by Low Energy Focused Ion Beam Irradiation in GaAs

Published online by Cambridge University Press:  22 February 2011

Toshihiko Kosugi ,
Yoshihiko Yuba  and
Kenji Gamo
Toshihiko Kosugi*
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Yoshihiko Yuba
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
Kenji Gamo
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
*
Present Address: NTT LSI Laboratories, Morinosato Wakamiya, Atsugi 243-01, Japan
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Abstract

Defects induced by Ga focused ion beam (FIB) irradiation at an energy between 0.1 and IkeV have been characterized by means of deep level transient spectroscopy (DLTS) and related capacitance measurements. Seven different kinds of defect centers were resolved and two centers at 0.33 and O.56eV below the conduction band were dominant in the 100eV Ga implanted sample at doses up to 1015/cm2. Induced defect centers were observed to distribute over the region far beyond the theoretical ion range, which resulted from defect migration during the irradiation. Low energy irradiation induced defects were readily annealed out during low temperature heat treatment in contrast to those induced by high energy irradiations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 1047
Copyright
Copyright © Materials Research Society 1994

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References

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