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Investigation of Amorphous-Crystalline Silicon Interface Via Capacitance Techniques

Published online by Cambridge University Press:  26 February 2011

J. M. Essick  and
J. D. Cohen
J. M. Essick
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
J. D. Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403
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Abstract

Amorphous-crystalline heterostructures composed of sub-micron thick undoped amorphous hydrogenated silicon deposited on lightly doped n-type crystalline silicon substrates have been studied by capacitance techniques. Capacitance vs. temperature scans along with model calculations on these samples are used to investigate the amorphous-crystalline silicon interface region. We deduce the existence of an anomalously defective a-Si:H region extending roughly 1000 Angstroms from the growth interface. We also deduce considerable fluctuations in the interface potential which indicate lateral variations of ±20% in the defect distritribution over a 1000 Angstrom scale.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 549
Copyright
Copyright © Materials Research Society 1988

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References

1. Ast, D.G. and Brodsky, M.H., J. Non-Cryst. Solids 35–36,611(1980); I. Solomon and M.H. Brodsky J.Appl. Phys 51,4548(1980); W. Rehm, R. Fischer and J. Beichler Appl. Phys. Lett. 37,447(1980)CrossRefGoogle Scholar
2. See, for example, Cohen, J.D. in Hydrogenated Amorphous Silicon, Vol 21C, ed. By Pankove, J.I. (Academic Press,NY,1984) p.9 CrossRefGoogle Scholar
3. Lang, D.V., Cohen, J.D. and Harbison, J.P., Phys. Rev. Lett. 48,421 (1982).CrossRefGoogle Scholar
4. Smith, Z E., Aljishi, S., Chu, V., Slobodin, D., Wagner, S., lenahan, P.M., Arya, R.R. and Bennett, M.S., Phys. Rev. Lett. 57, 2450 (1986).CrossRefGoogle Scholar
5. Cohen, J.D. and Lang, D.V., Phys. Rev. B, 25, 5321 (1982).CrossRefGoogle Scholar
6. Ley, L, Reichardt, J. and Johnson, R.L., Proceedings of the 17th Int'l Conf. on the Phys. of Semiconductors, San Franciso, 1984, p.811CrossRefGoogle Scholar