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Investigation of a Thermal Spike Model for Ion Mixing of Metals with SI

Published online by Cambridge University Press:  25 February 2011

U. Shreter ,
Frank C.T. So ,
B. M. Paine  and
M-A. Nicolet
U. Shreter
Affiliation:
California Institute of Technology, Pasadena, Ca 91125
Frank C.T. So
Affiliation:
California Institute of Technology, Pasadena, Ca 91125
B. M. Paine
Affiliation:
California Institute of Technology, Pasadena, Ca 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, Ca 91125
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Abstract

A Model for Ion Mixing of Bilayer systems in a thermal spike is described. Normal thermal reactions, at a constant average temperature, are assumed for the duration of the spike. New experimental results on mixing of a Nb/Si couple with Xe ions are shown to agree with the prediction of the model that the apparent activation energy in ion mixing can depend upon the ion species. Calculations of spike mixing for Cr and Ni with Si are presented which show that a substantial part of the experimentally observed mixing rates, and their temperature dependence, can be attributed to thermal spike effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 31
Copyright
Copyright © Materials Research Society 1984

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References

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