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Inversion of Conductivity in p-Si after Ion Treatment
Published online by Cambridge University Press: 26 February 2011
Abstract
The results of electric parameters studies of silicon samples with unusual p-n junctions are presented. The junctions appeared after the treatment of homogeneous p-Si wafers by 1–5 keV energy argon ion irradiation at the temperature below 100°C and without doping by any n-type impurities. The model of this phenomena is discussed.
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- Copyright © Materials Research Society 1995
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