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Inversion Domain Boundaries in GaN Grown on Sapphire

Published online by Cambridge University Press:  10 February 2011

L. T. Romano  and
J.E. Northrup
L. T. Romano
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd, Palo Alto, CA 94304
J.E. Northrup
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd, Palo Alto, CA 94304
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Abstract

Inversion domain boundaries (IDBs) in GaN grown on sapphire (0001) were studied by a combination of high resolution transmission electron microscopy, multiple dark field imaging, and convergent beam diffraction. Films grown by molecular beam epitaxy (MBE), metalorganic vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE) were investigated and all found to contain IDBs. Inversion domains (IDs) that extended from the surface to the interface were found to be columnar with facets on the {10–10} and {11–20} planes. Other domains ended within the film that formed IDBs on the (0001) and {1–102} planes. The domains were found to grow in clusters and connect at points along the boundary.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 423
Copyright
Copyright © Materials Research Society 1997

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References

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