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Introduction of Radiative Isoelectronic Complexes During Molecular Beam Epitaxial Growth of Si and Si1-xGex/Si Superlattices

Published online by Cambridge University Press:  26 February 2011

Karen L. Moore ,
Oliver King ,
Dennis G. Hall ,
Joze Bevk  and
Matthias Furtsch
Karen L. Moore
Affiliation:
University of Rochester, The Institute of Optics, Rochester, NY 14627
Oliver King
Affiliation:
University of Maryland, Laboratory for Physical Sciences, College Park, MD 20740
Dennis G. Hall
Affiliation:
University of Rochester, The Institute of Optics, Rochester, NY 14627
Joze Bevk
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Matthias Furtsch
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Radiative isoelectronic impurity complexes consisting of pairs of Be atoms that bind excitons can be formed in both Si and SiGe/Si superlattices during growth by molecular beam epitaxy. We describe the conditions under which these radiative complexes can be formed and show that they can be localized in the alloy layers of a superlattice. Experimental results from samples with grown-in Be are compared to previous results from ion implanted samples. Superlattices of varying well widths are examined and a narrowing of the no-phonon linewidth is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 887
Copyright
Copyright © Materials Research Society 1995

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