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Introduction of Innovative Dopant Concentration Profiles to Broaden the Recombination Zone of Phosphorescent OVPD-Processed Organic Light Emitting Diodes

Published online by Cambridge University Press:  31 January 2011

Manuel Bösing ,
Christoph Zimmermann ,
Florian Lindla ,
Frank Jessen ,
Philipp van Gemmern ,
Dietrich Bertram ,
Nico Meyer ,
Dietmar Keiper ,
M. Heuken  and
Holger Kalisch
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Manuel Bösing
Affiliation:
[email protected], RWTH Aachen University, Chair of Electromagnetic Theory, Aachen, Germany
Christoph Zimmermann
Affiliation:
[email protected], RWTH Aachen University, Chair of Electromagnetic Theory, Aachen, Germany
Florian Lindla
Affiliation:
[email protected], RWTH Aachen University, Chair of Electromagnetic Theory, Aachen, Germany
Frank Jessen
Affiliation:
[email protected], United States
Philipp van Gemmern
Affiliation:
[email protected], Philips Technologie GmbH, Aachen, Germany
Dietrich Bertram
Affiliation:
[email protected], United States
Nico Meyer
Affiliation:
[email protected], AIXTRON AG, Aachen, Germany
Dietmar Keiper
Affiliation:
[email protected], United States
M. Heuken
Affiliation:
[email protected], United States
Holger Kalisch
Affiliation:
[email protected], United States
Rolf H. Jansen
Affiliation:
[email protected], United States
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Abstract

OLED with non-constant dopant concentration profiles have been processed by means of organic vapour phase deposition (OVPD) and were compared with regard to their luminous current efficiencies. Especially when driven at ultra-high luminance (>10,000 cd/A), OLED with a dopant concentration profile starting with a rather high dopant concentration on the anode side of the emissive layer showed improved luminous current efficiencies compared to their conventional counterparts.

To further investigate this effect, the width and location of the recombination zone have been simulated for all investigated concentration profiles by numerical solution of the semiconductor device equations using experimentally determined doping-dependent charge carrier mobilities. The obtained theoretical results are discussed with regard to the accomplished experiments.

Keywords

devicesoptoelectronicorganic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1154: Symposium B – Concepts in Molecular and Organic Electronics , 2009 , 1154-B11-05
Copyright
Copyright © Materials Research Society 2009

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References

1 Tanaka, D., Sasabe, H., Li, Y.-J., Su, S.-J., Takeda, T., and Kido, J.. Jpn. J. of Appl. Phys. Vol. 46, No. 1, 2007, pp. L10–L12Google Scholar
2 Lindla, F. et al. MRS Symp. Proc. 2009, in publishingGoogle Scholar
3 Baldo, M. A., Adachi, C., and Forrest, S. R.. Phys. Rev. B 62, 10967 (2000)Google Scholar
4 Kepler, R. G., Caris, J. C., Avakian, P., and Abramson, E., Phys. Rev. Lett. 10, 400 (1963)Google Scholar
5 Reineke, S., Walzer, K., and Leo, K. Phys. Rev. B 75, 125328 (2007)Google Scholar