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Intrinsic Stress and Structure in Mixed Composition thin films

Published online by Cambridge University Press:  26 February 2011

Haluk Sankur ,
J. Denatale  and
W. J. Gunning
Haluk Sankur
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
J. Denatale
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
W. J. Gunning
Affiliation:
Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks, CA 91360
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Abstract

Intrinsic stress and microstructure of mixed composition films were investigated for several material systems useful in the IR wavelength range. Stress in coevaporated mixed films (analog) deviated from a linear dependence on composition, while in discrete alternating films (digital) it varied linearly with composition. For MgF2-Ge and CeF3-Ge, analog film stress was small and compressive over a large range of intermediate compositions despite the fact that the constituent materials had high tensile stress. The stress behavior correlated with changes in the microstructure. Low stress compositions were observed to correspond to enhanced grain size in the mixed film. These results have significant implications for the design of gradient-index thin-film structures.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 551
Copyright
Copyright © Materials Research Society 1987

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References

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