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Intrinsic Point Defects and Diffusion Processes in Silicon

Published online by Cambridge University Press:  21 February 2011

T. Y. Tan
T. Y. Tan*
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY, 10598
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Abstract

This paper reviews recent progress in understanding the role of vacancies (V) and self-interstitials (I) in self and impurity diffusion in Si. Surface oxidation perturbs the thermal equilibrium concentration of point defects and analyses of the resulting effects on dopant diffusion showed that both V and I are present. Developments in experimental and theoretical works on Au diffusion in Si yielded a determination of the I-component and an estimate of the V-component of the Si self-diffusion coefficient. It is hoped that the I and V thermal equilibrium concentrations may be determined in the near future.A number of important physical aspects of the anomalous diffusion of P are now understood but a basically satisfactory model may need further work.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 31: Symposium N – Electron Microscopy of Materials , 1983 , 127
Copyright
Copyright © Materials Research Society 2006

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