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Intrinsic, n- and p-Doped a-Si:H Thin Films Grown by DC Magnetron Sputtering with Doped Targets

Published online by Cambridge University Press:  15 February 2011

Å.A. Johansson ,
K. Jårrendahl ,
J. Birch ,
B. Hjörvarsson  and
H. Arwin
Å.A. Johansson
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
K. Jårrendahl
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
J. Birch
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
B. Hjörvarsson
Affiliation:
Dept. of Physics, Royal Inst of Technology, SE-100 44 Stockholm, Sweden
H. Arwin
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
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Abstract

Intrinsic, n- and p-type a-Si:H films were deposited by dc magnetron sputtering and analyzed with several techniques. The films were synthesized in a reactive Ar-H2 atmosphere giving H contents in the range of 3-20 at %. The films were sputtered from pure silicon targets and doped silicon targets with 1 at % B or P. Doping by co-sputtering from composite Si/B4C targets was also explored. The doping concentrations were 3 × 1020 − 2 × 1021 cm-3 for the p-type films and 2.6-2.9 × 1019 cm-3 for the n-type films. The conductivity was in the range 10-2−10-4 Ω-1 cm-1 for p-doped films and 10-5 Ω-1 cm-1 for the best n-doped films. Band gap estimations were obtained from dielectric function data and showed an increase with hydrogen content. A comparison to device quality PECVD-samples was also made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 31
Copyright
Copyright © Materials Research Society 1999

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