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Intrinsic, n- and p-Doped a-Si:H Thin Films Grown by DC Magnetron Sputtering with Doped Targets

Published online by Cambridge University Press:  15 February 2011

Å.A. Johansson ,
K. Jårrendahl ,
J. Birch ,
B. Hjörvarsson  and
H. Arwin
Å.A. Johansson
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
K. Jårrendahl
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
J. Birch
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
B. Hjörvarsson
Affiliation:
Dept. of Physics, Royal Inst of Technology, SE-100 44 Stockholm, Sweden
H. Arwin
Affiliation:
Dept. of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden
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Abstract

Intrinsic, n- and p-type a-Si:H films were deposited by dc magnetron sputtering and analyzed with several techniques. The films were synthesized in a reactive Ar-H2 atmosphere giving H contents in the range of 3-20 at %. The films were sputtered from pure silicon targets and doped silicon targets with 1 at % B or P. Doping by co-sputtering from composite Si/B4C targets was also explored. The doping concentrations were 3 × 1020 − 2 × 1021 cm-3 for the p-type films and 2.6-2.9 × 1019 cm-3 for the n-type films. The conductivity was in the range 10-2−10-4 Ω-1 cm-1 for p-doped films and 10-5 Ω-1 cm-1 for the best n-doped films. Band gap estimations were obtained from dielectric function data and showed an increase with hydrogen content. A comparison to device quality PECVD-samples was also made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 31
Copyright
Copyright © Materials Research Society 1999

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References

1. Street, R. A., Nelson, S., Antonuk, L. and Mendez, V. P., Mat. Res. Soc. Symp. Proc., 192, pp. 441–452, (1990).Google Scholar
2. Street, R. A., Wu, X. D., Weisfield, R., Ready, S., Apte, R., Ngyuen, M., Jackson, W. B. and Nylen, P., Journal of Non-Crystalline Solids, 198–200, pp. 1151–1154, (1996).Google Scholar
3. Moustakas, T. D., Solar Energy Materials, 13, pp. 373–384, (1986).Google Scholar
4. Carlson, D. E., Critical Reviews in Solid State and Materials Science, 16, pp. 417–435, (1990).Google Scholar
5. Liang, Y. H., Yang, S.-Y., Nuruddin, A. and Abelson, J. R., Mat. Res. Soc. Symp. Proc., 336, pp. 589–94, (1994).Google Scholar
6. Thompson, M. J., “Sputtered Material,” in The physics of Hydrogenated Amorphous Silicon I, vol. 55, Topics in Applied Physics, edited by: Joannopoulus, J. D. and Lucovsky, G., Springer-Verlag, Berlin Heidelberg, 1984, pp. 119–175.Google Scholar
7. Fedders, P. A., Phys. Rev. B, 58, pp. 7020–7023, (1998).Google Scholar
8. Tauc, J., Grigorovici, R. and Vancu, A., Phys. Stat. Sol., 15, pp. 627–637, (1966).Google Scholar
9. Aspnes, D. E., Studna, A. A. and Kinsbron, E., Phys. Rev. B, 58, pp. 768–779, (1984).Google Scholar
10. Cardona, M., Modulation Spectroscopy, Academic, New York, 1969, pp. 55–65.Google Scholar