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Intrasubband 1.55 μm Electrooptical Modulation in SiGe Asymmetric Quantum Well Structures
Published online by Cambridge University Press: 25 February 2011
Abstract
A new, fast, intrasubband 1.55 μm electrooptic modulator in the SiGe/Si/CaF2-on-Si steppedquantum- well system is proposed and analyzed. At electric fields of ±8 V/μm, resonant 1-3 conduction intrasubband absorption is predicted to give 18 dB of optical extinction for narrow-linewidth transitions. We expect this field effect modulator to have microwave response, plus compatibility with Si-based optoelectronic integration.
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- Copyright © Materials Research Society 1993
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