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Intra-magnetoexciton transitions in semiconductor quantum wells

Published online by Cambridge University Press:  21 March 2011

Z. Barticevic ,
M. Pacheco ,
C. A. Duque  and
L. E. Oliveira
Z. Barticevic
Affiliation:
Depto. de Física, Universidad Técnica Federico Santa María, Casilla 110-V, Valparaíso, Chile
M. Pacheco
Affiliation:
Depto. de Física, Universidad de Santiago de Chile, Casilla 307, Santiago, Chile
C. A. Duque
Affiliation:
Depto de Física, Universidad de Antioquia, AA 1226, Medellín, Colombia
L. E. Oliveira
Affiliation:
Instituto de Física, Univ. Estadual de Campinas - Unicamp, CP 6165, Campinas-SP, Brazil
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Abstract

Highly sensitive optically detected resonance experiments have shown that magnetoexcitons in GaAs-(Ga,Al)As semiconductor quantum wells have discrete internal energy levels, with transition energies found in the far-infrared (terahertz) region. Here we are concerned with a theoretical study of the terahertz transitions of light-hole and heavy-hole confined magnetoexcitons in GaAs-(Ga,Al)As quantum wells, under a magnetic field applied in the growth direction of the semiconductor heterostructure. The various magnetoexciton states are obtained in the effective-mass approximation by expanding the corresponding exciton-envelope wave functions in terms of appropriate Gaussian functions. The electron and hole cyclotron resonances and intra-magnetoexciton transitions are theoretically studied by exciting the allowed electron, hole and internal magnetoexcitonic transitions with far-infrared radiation. Theoretical results are obtained for both the intra-magnetoexciton transition energies and oscillator strengths associated with excitations from 1s - like to 2s, 2p±, and 3p±- like magnetoexciton states, and from 2p- to 2s – like exciton states. Present results are in overall agreement with available optically detected resonance measurements and clarifies a number of queries in previous theoretical work.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.35.1
Copyright
Copyright © Materials Research Society 2002

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