Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-29T09:35:07.982Z Has data issue: false hasContentIssue false

Intra-Granular Microstructure And Stress In Sputtered Tungsten Thin Films

Published online by Cambridge University Press:  15 February 2011

M.F. Ravet
Affiliation:
Laboratoire de Microstructures et Microélectronique, CNRS, 196 Av. H. Ravera, 92225
K.F. Badawi
Affiliation:
Laboratoire de Métallurgie Physique, CNRS, 40, Avenue du Recteur Pineau, 86022 Poitiers, France
N. Durand
Affiliation:
Laboratoire de Métallurgie Physique, CNRS, 40, Avenue du Recteur Pineau, 86022 Poitiers, France
H. Lafontaine
Affiliation:
Laboratoire de Microstructures et Microélectronique, CNRS, 196 Av. H. Ravera, 92225 Permanent address: INRS Energie Matériaux, 1650 Monté Sainte Julie, Varennes, Canada
V. Barnole
Affiliation:
France-Telecom CNET, 196 Av. Henri Ravera, 92225 Bagneux, France
A.M. Haghiri-Gosnet
Affiliation:
Laboratoire de Microstructures et Microélectronique, CNRS, 196 Av. H. Ravera, 92225
Get access

Abstract

Intra-granular microstructure and stress of tungsten rf magnetron sputtered thin films have been correlated for deposits with stresses ranging from 1000 MPa to −1000 MPa and belonging to the zone T of the Thornton's microstructural diagram. For pure α-W films, the stress values determined from the substrate deflection method were shown to be comparable with those determined by the x-ray diffraction sin2ψ method using the α-W (321) reflection. The lattice parameter a0 of the unstressed material as deduced and was found to depend on the deposition conditions. In addition, a significant broadening of the (321) diffraction peak was observed foi compressive films, which suggests that the intra-granular microstructure has been changed. These original results are interpreted in terms of structural defects: in particular, compressive stress can be related to an interstitial feature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hoffmann, D.W. and Thorton, J.A., Thin Solid Films 171, 5 (1989)Google Scholar
2. Haghiri, A.M., Ladan, F.R., Mayeux, C. and Launois, H., J. Vac. Sci. Technol. A7, 2663 (1989)CrossRefGoogle Scholar
3. Ku, Y-C., Smith, H.I. and Plotnik, I., J.Vac. Sci. Technol. B6, 2174 (1988)CrossRefGoogle Scholar
4. Ku, Y-C., Ng, L.P., Carpenter, R., Lu, K., Smith, H.I., Haas, L.E. and Plotnik, I., J.Vac. Sci. Technol. B9, 3297 (1991)CrossRefGoogle Scholar
5. Kola, R.R., Celler, G.K., Frackoviak, J., Jurgensen, C.W. and Trimble, L.E., J. Vac. Sci. Technol. B9, 3301 (1991)CrossRefGoogle Scholar
6. Ito, M., Hori, M. and Nakahara, S., J. Vac. Sci. Technol. B9, 149 (1991)CrossRefGoogle Scholar
7. Luethje, H., Harms, M., Burns, A. and Mackens, Y., Microelectronics. Eng. 6, 259 (1987)CrossRefGoogle Scholar
8. d'Heurle, F.M., Metall. Trans. 1, 275 (1970)Google Scholar
9. d'Heurle, F.M., International Materials Review 34, 60 (1989)CrossRefGoogle Scholar
10. Windischmann, H., Critical reviews in Solid State and Materials Science 17 (6), 547 (1992)CrossRefGoogle Scholar
11. Dölle, H., J. Appl. Cryst. 12, 489 (1979)CrossRefGoogle Scholar
12. Badawi, K.F., Castex, L., Sprauel, J.M., Matdriaux et Structures, Ed. Hermes Paris, 295 (1987)Google Scholar
13. Badawi, K.F., Declemy, A., Naudon, A., Goudeau, P., J. Phys.flI 2, 1741 (1992)Google Scholar
14. Paine, D.C., Bravman, J.C., and Yang, C.Y., Appl. Phys. Lett. 50, 498 (1987)CrossRefGoogle Scholar
15. Hoffman, D.W. and Thornton, J.A., Thin Solid Films 40, 335 (1977)CrossRefGoogle Scholar
16. Hoffman, D.W. and Thornton, J.A., Thin Solid Films 45, 387 (1977)CrossRefGoogle Scholar
17. Goudeau, P., Badawi, K.F., Naudon, A., Gladyszewski, G., Appl. Phys. Lett. 62, 246 (1993)CrossRefGoogle Scholar
18. Warren, B.E. and Averbach, B.L., J.Appl. Phys. 21, 595 (1950)CrossRefGoogle Scholar