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Intersubband Transitions in Proton Irradiated InGaAs/InAlAs Multiple Quantum Wells Grown on Lattice Matched InP Substrate

Published online by Cambridge University Press:  11 February 2011

Qiaoying Zhou ,
M. O. Manasreh ,
B. D. Weaver  and
M. Missous
Qiaoying Zhou
Affiliation:
Depart of Electrical & Computer Engineering, The University of New Mexico, Albuquerque, NM 87131–1356.
M. O. Manasreh
Affiliation:
Depart of Electrical & Computer Engineering, The University of New Mexico, Albuquerque, NM 87131–1356.
B. D. Weaver
Affiliation:
Naval Research Lab, 4555 Overlook Ave., SW, Washington, DC 20375.
M. Missous
Affiliation:
Department of Electrical Engineering and Electronics, UMIST, P. O. BOX 88, Manchester M60 1QD, England, UK.
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Abstract

Radiation hardness on intersubband transition in proton-irradiated InGaAs/InAlAs multiple quantum wells is investigated using Fourier transform infrared absorption (FTIR) technique and compared to the results observed for the GaAs/AlGaAs multiple quantum wells. It is observed that the intersubband transition remains almost unchanged in samples irradiated with 1 MeV protons and with doses as high as 1×1014 cm-2. This dose on the other hand, was found to completely deplete the intersubband transition in GaAs/AlGaAs multiple quantum wells samples. The intersubband transition in InGaAs/InAlAs multiple quantum wells was almost washed out in samples irradiated with doses as high as 3×1015 cm-2. The partial thermal annealing recovery of the depleted intersubband transition in the proton irradiated InGaAs/InAlAs multiple quantum wells will be reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.37
Copyright
Copyright © Materials Research Society 2003

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References

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