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Intersubband Transitions in InAs/AlSb Quantum Wells

Published online by Cambridge University Press:  11 February 2011

J. Li ,
K. Kolokolov ,
C. Z. Ning ,
D. C. Larraber ,
G. A. Khodaparast ,
J. Kono ,
K. Ueda ,
Y. Nakajima ,
S. Sasa  and
M. Inoue
J. Li
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035
K. Kolokolov
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035
C. Z. Ning
Affiliation:
Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035
D. C. Larraber
Affiliation:
Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005
G. A. Khodaparast
Affiliation:
Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005
J. Kono
Affiliation:
Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005
K. Ueda
Affiliation:
Department of Electrical Engineering, Osaka Institute of Technology, Osaka, Japan
Y. Nakajima
Affiliation:
Department of Electrical Engineering, Osaka Institute of Technology, Osaka, Japan
S. Sasa
Affiliation:
Department of Electrical Engineering, Osaka Institute of Technology, Osaka, Japan
M. Inoue
Affiliation:
Department of Electrical Engineering, Osaka Institute of Technology, Osaka, Japan
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Abstract

We have studied intersubband transitions in InAs/AlSb quantum wells experimentally and theoretically. Experimentally, we performed polarization-resolved infrared absorption spectroscopy to measure intersubband absorption peak frequencies and linewidths as functions of temperature (from 4 K to room temperature) and quantum well width (from a few nm to 10 nm). To understand experimental results, we performed a self-consistent 8-band k·p band-structure calculation including spatial charge separation. Based on the calculated band structure, we developed a set of density matrix equations to compute TE and TM optical transitions self-consistently, including both interband and intersubband channels. This density matrix formalism is also ideal for the inclusion of various many-body effects, which are known to be important for intersubband transitions. Detailed comparison between experimental data and theoretical simulations is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M9.2
Copyright
Copyright © Materials Research Society 2003

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References

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