Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T01:56:14.240Z Has data issue: false hasContentIssue false
  • English
  • Français

Intersubband Transitions in In0.07Ga0.93As/Al0.4Ga0.6As Multiple Quantum Wells

Published online by Cambridge University Press:  15 February 2011

F. Szmulowicz ,
M. O. Manasreh ,
C. Kutsche  and
C. E. Stutz
F. Szmulowicz
Affiliation:
Materials Directorate (WL/MLPO), Wright Laboratory, Wright-Patterson Air Force Base, OH 45433.
M. O. Manasreh
Affiliation:
Solid State Electronics Directorate (WL/ELRA), Wright Laboratory, Wright-Patterson Air Force Base, OH 45433.
C. Kutsche
Affiliation:
Solid State Electronics Directorate (WL/ELRA), Wright Laboratory, Wright-Patterson Air Force Base, OH 45433.
C. E. Stutz
Affiliation:
Solid State Electronics Directorate (WL/ELRA), Wright Laboratory, Wright-Patterson Air Force Base, OH 45433.
Get access

Abstract

Intersubband transitions in a series of well-doped ([Si] = 2.0×1018cm−3) In0.07Ga0.93As/Al0.4Ga0.6As multiple quantum well samples were studied as a function of the well width by using the optical absorption technique. A single intersubband transition is observed in samples in which the Fermi energy level is between the ground and the first excited states in the quantum well. On the other hand, two intersubband transitions were recorded in samples where the Fermi energy level lies between the first and the second excited states. These two intersubband transitions were attributed to ground-to-first excited states and first-to-second excited states transitions. The energy separation between the latter two intersubband transitions was found to increase as the well width is increased. The fact that two intersubband transitions were observed in certain samples may suggest that specially designed quantum wells can be used for two color long wavelength infrared detectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 53
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See for example Semiconductor Ouantum Wells and Suoerlattices for Lona Wave-Lenath Infrared Detectors, edited by Manasreh, M. O. (ARTECH House, Boston, 1993).Google Scholar
2. Levine, B. F., J. Appl. Phys.(to be published as a review article).Google Scholar
3. West, L. C. and Englash, S. J., Appl. Phys. Lett. 46,1156 (1985).Google Scholar
4. Hasnain, G., Levine, B. F., Bethea, C. G., Logan, R. A., Walker, J. and Malik, R. J., Appl. Phys. Lett. 54, 2515 (1989).Google Scholar
5. Yu, L. S. and Li, S. S., Appl. Phys. lett. 59, 1332 (1991).CrossRefGoogle Scholar
6. Bandara, K. M. S. V., Choe, J. -Q., Francombe, M. H., Perera, A. G. U., and Lin, Y. F., Appl. Phys. Lett. 60, 3022 (1992).CrossRefGoogle Scholar
7. Yu, L. S., Wang, Y. H., and Li, S. S., Appl. Phys. Lett. 60, 992 (1992).Google Scholar
8. Asai, H. and Kawamura, Y., Appl. Phys. Lett. 56, 1149 (1990).Google Scholar
9. Asai, H. and Kawamura, Y., Appl. Phys. Lett. 56, 1427 (1990).Google Scholar
10. Asai, H. and Kawamura, Y., Phys. Rev. B 43, 4748 (1991).Google Scholar
11. Manasreh, M. O., Szmulowicz, F., Vaughan, T., Evans, K. R., Stutz, C. E., and Fischer, D. W., Phys. Rev. B 43, 9996 (1991).CrossRefGoogle Scholar