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Interpretation of High Field Transport in A-Si:H Based on the Effective Temperature Definition

Published online by Cambridge University Press:  16 February 2011

Christoph E. Nebel  and
R. A. Street
Christoph E. Nebel
Affiliation:
Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, California 94304, USA
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Abstract

The effective temperature definition which combines electric field and lattice temperature is critically discussed based on dark conductivity and drift mobility data measured over a wide range of temperature (10 K ≤ T ≤ 300 K) and electric field (102 V/cm ≤ F ≤ 6×105 V/cm). The reasonable values for the localisation lengths of electrons (αe ≡ 7–8 A) and holes (αh, ≡ 4 A) as well as the overall good agreement between predicted and deduced features support the effective temperature concept. A statistical transit time equation for transport at low temperature and high field is given and discussed based on time-of-flight data measured at T = 40 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 383
Copyright
Copyright © Materials Research Society 1994

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