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Interfacial Structure and Stability in GexSi1−x/Si Strained Layers.

Published online by Cambridge University Press:  26 February 2011

R. Hull ,
J. C. Bean ,
J. M. Gibson ,
K. J. Marcantonio ,
A. T. Fiory  and
S. Nakahara
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
K. J. Marcantonio
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
A. T. Fiory
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
S. Nakahara
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

High resolution electron microscopy is used to probe the atomic scale structure of interfaces and defects in the GexSi1−x/Si system. By careful quantification of lattice images, it is shown that molecular beam epitaxy may be used to grow GexSi1−x/Si (100) and (111) interfaces which are sharp on the scale of the unit cell and flat to within a few atomic planes when about 5000 Å2 of the interface are sampled. Interfacial quality is retained in single and multiple quantum well structures. Conditions for superlattice stability against misfit dislocations are discussed. It is shown that GexSi1−x/Si interfaces produced by molecular beam epitaxy at 550°C can exist in a metastable state which relaxes upon thermal annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 261
Copyright
Copyright © Materials Research Society 1985

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References

[1] Hull, R., Fiory, A.T., Bean, J.C., Gibson, J.M., Scott, L., Benton, J.L. and Nakahara, S., to be published in J.Elec.Mat.Google Scholar
[2] Bean, J.C., these proceedingsGoogle Scholar
[3] Kasper, E., Herzog, H.J. and Kibbel, H., Appl. Phys. 8, 199 (1975).CrossRefGoogle Scholar
[4] Manasevit, H.M., Gergis, I.S. and Jones, A.B., J.Elec. Mat. 12, 637 (1983).Google Scholar
[5] Bean, J.C., Feldman, L.C., Fiory, A.T., Nakahara, S. and Robinson, I.K., J. Vac. Sci. Technol. A2, 436 (1984).CrossRefGoogle Scholar
[6] See, for example, High Resolution Electron Microscopy, J.C.H.Spence (Clarendon Press, Oxford, 1981).Google Scholar
[7] Goodman, P. and Moodie, A.F., Acta. Cryst. A30, 280 (1974).Google Scholar
[8] Doyle, P.A. and Turner, P.S., Acta. Cryst. A24, 390 (1968).Google Scholar
[9] Hull, R., Gibson, J.M. and Bean, J.C., to be published in Appl. Phys. Lett.Google Scholar
[10] Gibson, J.M., Treacy, M.M.J., Hull, R. and Bean, J.C., these proceedings.Google Scholar
[11] Cerdeira, F., Pinczuk, A., Bean, J.C., Batlogg, B., and Wilson, B.A., Appl. Phys. Lett. 45, 1138 (1984).10.1063/1.95014Google Scholar
[12] Van der Merwe, J.H. and Ball, C.A.B. in Epitaxial Growth, Part b, edited by Matthews, J.W. (Academic Press, New York, 1975).Google Scholar