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Interfacial Stability and Interdiffusion Examined at the Atomic Level

Published online by Cambridge University Press:  25 February 2011

Y. Kim ,
A. Ourmazd ,
R.J. Malik  and
J.A. Rentschler
Y. Kim
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
A. Ourmazd
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
R.J. Malik
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J.A. Rentschler
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733
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Abstract

Using chemical lattice imaging in combination with vector pattern recognition, we obtain quantitative profiles of the chemical change across single interfaces with atomic plane resolution. We thus study interdiffusiuon across single GaAs/AlGaAs interfaces as a function of temperature, depth of interface beneath the surface, and doping. Since our technique is sensitive to interdiffusion coefficients as small as 10−20 cm2/s, we can study atomic level changes at a single interface at the low temperatures used for many device processing steps (∼700C). Our results show interdiffusion, and hence the layer stability depend not only on temperature and doping, but also on the distance of the interface from the surface. The implications of these results for the stability of multilayered structures are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 351
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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