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Interfacial Reactions of Nickel films on GaAs

Published online by Cambridge University Press:  21 February 2011

L.J. Chen  and
Y.F. Hsieh
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
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Abstract

Transmission electron microscopy (TEM) and X-ray diffraction (XRD) were performed to study the interfacial reactions of Ni/GaAs contact system as a result of isothermal annealing and two step annealing. Ni2GaAs was observed to exhibit preferred orientation relationships with respect to GaAs substrate after 300–350°C annealing. The compound decomposed to NiAs and Ga-compounds after 400°C annealing. NiAs was also found to grow preferentially on GaAs. The step annealing was found to be ineffective in varying the morphological structure of interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 31: Symposium N – Electron Microscopy of Materials , 1983 , 165
Copyright
Copyright © Materials Research Society 2006

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References

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