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Interfacial Quality of Strained-Layer InGaAs/GaAs Quantum Well Lasers Grown by Gas-Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

G. Zhang ,
A. Ovtchinnikov  and
M. Pessa
G. Zhang
Affiliation:
Department of Physics, Tampere University of Technology, P. O. Box 692, SF-33101 Tampere, Finland
A. Ovtchinnikov
Affiliation:
Department of Physics, Tampere University of Technology, P. O. Box 692, SF-33101 Tampere, Finland
M. Pessa
Affiliation:
Department of Physics, Tampere University of Technology, P. O. Box 692, SF-33101 Tampere, Finland
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Abstract

We report a study of interfacial quality of strained-layer InGaAs/GaAs quantum well lasers grown by gas-source molecular beam epitaxy. It was found that the growth temperature (Tgr) of the InGaAs layer plays an important role in the interfacial quality. For Tgr < 515 °C, a large amount of non-radiative recombination centers is likely to exist in the InGaAs/GaAs quantum well, which can be attributed to the presence of vacancies and atom clusters and lattice misfit defects. For Tgr > 515 °C, the InGaAs/GaAs interfaces show significant roughness due to In segregation. Rapid thermal annealing grades the InGaAs/GaAs interface because of interdiffusion of group-III atoms at the interface, and removes most of the non-radiative recombination centers from the low Tgr (<515 °C) samples. In addition, we observed that the interfacial quality of the InGaAs/GaAs quantum well shows no strong dependence on (100) vicinal orientations of GaAs substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 153
Copyright
Copyright © Materials Research Society 1993

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References

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