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Interfacial Particles in Mbe Sillicon Homoepitaxy Growth

Published online by Cambridge University Press:  26 February 2011

R.M. Chrenko ,
E.L. Hall ,
N. Lewis  and
G.A. Smith
R.M. Chrenko
Affiliation:
General Electric Company, Corporate Research and Developmen† P.O. Box 8, Schenectady, NY 12301
E.L. Hall
Affiliation:
General Electric Company, Corporate Research and Developmen† P.O. Box 8, Schenectady, NY 12301
N. Lewis
Affiliation:
General Electric Company, Corporate Research and Developmen† P.O. Box 8, Schenectady, NY 12301
G.A. Smith
Affiliation:
General Electric Company, Corporate Research and Developmen† P.O. Box 8, Schenectady, NY 12301
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Abstract

Particles are observed at the epitaxial layer-substrate Interface of silicon MBE layers when Improper pre—deposition cleaning methods are used. HRTEM shows that the particles In our material are 5 nm to 10 nm In size, and Molre fringe patterns suggest the material Is crystal line. Using a combination of SIMS, HRTEM, and x-ray microanalysis methods, It Is concluded that the Interfacial particles In our material contain carbon and not oxygen, and are beta-SiC growing epitaxially with the silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 373
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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