Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T18:54:46.006Z Has data issue: false hasContentIssue false
  • English
  • Français

Interfacial Gas Desorption and Diffusion during the Low Thermal Stress Fusion of III/V Materials to Si

Published online by Cambridge University Press:  01 February 2011

Phil Mages  and
Paul K. L. Yu
Phil Mages
Affiliation:
University of California at San Diego Department of Electrical and Computer Engineering 9500 Gilman Drive La Jolla, CA 92093-0407
Paul K. L. Yu
Affiliation:
University of California at San Diego Department of Electrical and Computer Engineering 9500 Gilman Drive La Jolla, CA 92093-0407
Get access

Abstract

A Low Thermal Stress (LTS) process, involving the removal of most of the InGaAs(P) material, was used to allow for wafer-fusion of InGaAs(P) samples to Si. The formation and behavior of bubbles of trapped gas between the thinned layer of InGaAs(P) material and the thick Si substrate were studied due to the yield problems such bubbles represent. Observations revealed a low temperature regime <300°C, during which significant gas generation occurred but only weak, reversible bonds were formed. The higher temperature regime, 300°-650°C, was characterized by no significant increase in bubble density, but resulted in a reduction or complete blockage of gas escape during storage. Further investigation of the higher temperature regime indicated continued production of gas, but with a tendency of the gases produced above 300°C to escape from the interface without the formation of bubbles under normal conditions. This information led to the development of a scalable LTS process requiring no modification of the wafers prior to bonding and utilizing sample pre-heating to 300°C before InGaAs(P) removal and subsequent high temperature treatment to 650°C for permanent bond formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 722: Symposia K/L – Materials and Devices for Optoelectronics and Photonics – Photonic Crystals-From Materials to Devices , 2002 , K6.5
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hawkins, A.R., Wu, W., Abraham, P., Streubel, K., Bowers, J.E., “High gain-bandwidthproduct silicon heterointerface photodetector”, Applied Physics Letters, 70, 303–305 (1997)Google Scholar
2. Levine, B.F., Pinzone, C.J., Hui, S., King, C.A., Leibenguth, R.E., Zolnowski, D.R., Lang, D.V., Krautter, H.W., and Geva, M., “Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors”, Applied Physics Letters, 75, 2141–2143 (1999)Google Scholar
3. Kang, Y., Mages, P., Pauchard, A., Clawson, A.R., Lau, S.S., Lo, Y.H., and Yu, P.K.L., “Dark current reduction in fused InGaAs/Si avalanche photodiode”, digest of IEEE LEOs Annual Meeting, Paper ThN 4, Nov. 2001, La Jolla, CA Google Scholar
4. Pauchard, A., Kang, Y., Mages, P., Bitter, M., Sengupta, D., Pan, Z., Hummel, S., P.Yu, K.L., Lo, Y.H., “High Performance InGaAs-on-silicon avalanche photodiodes”, presented at IEEE/OSA Optical Fiber Communications Conference, March 2002, Anaheim, CA Google Scholar
5. Tong, Q.-Y., Gosele, U., Semiconductor Wafer Bonding, 1st ed., Wiley Inter-Science, New York, 1999, pp117–122.Google Scholar