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Interfacial Fluid Pressure and Its Effects on SiO2 Chemical Mechanical Polishing

Published online by Cambridge University Press:  14 March 2011

C. Zhou ,
L. Shan ,
J. R. Hight ,
S.H. Ng ,
A. J. Paszkowski ,
J. Tichy  and
S. Danyluk
C. Zhou
Affiliation:
School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA30332
L. Shan
Affiliation:
School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA30332
J. R. Hight
Affiliation:
School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA30332
S.H. Ng
Affiliation:
School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA30332
A. J. Paszkowski
Affiliation:
Chemical Products Corporation, Cartersville, GA
J. Tichy
Affiliation:
Mechanical and Aerospace Engineering Department, Rensselear Polytechnic Institute, Troy, NY
S. Danyluk
Affiliation:
School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA30332
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Abstract

In this paper, the experimental results of interfacial fluid pressure and friction measurements during polishing are presented, as well as their dependence on some major process variables. Under simulated conditions, a sub-ambient fluid pressure was observed, and its magnitude was of the same order of magnitude as the applied polishing load. Since this fluid pressure is non-uniformly distributed, the contact stress, obtained by combining the effects of both applied load and the fluid pressure, is not uniform across the wafer and will result in non-uniform material removal. The mechanism of the presence of the fluid pressure was investigated, and an analytical model was developed to predict the magnitude and distribution of this fluid pressure. The effects of the sub-ambient fluid pressure on material removal rate and profile were tested with thermally grown silicon dioxide on 100mm diameter, P-type (100), single crystal silicon wafers. The polishing experiments show the effect of sub-ambient fluid pressure on polishing rate and profile.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 613: Symposium E – Chemical-Mechanical Polishing 2000 - Fundamentals… , 2000 , E7.1.1
Copyright
Copyright © Materials Research Society 2000

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References

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