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Interfacial Diffusion

Published online by Cambridge University Press:  26 February 2011

Alan Atkinson
Alan Atkinson*
Affiliation:
Materials Development Division, Building 552, Harwell Laboratory, UKAEA, Oxfordshire, OX11 ORA, UK
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Abstract

The current understanding of mass transport at interfaces in solids is reviewed. The materials covered are metals, semiconductors and ionic compounds and the interfaces are mainly grain boundaries.

In metals and semiconductors grain boundary diffusion is always faster than the bulk and both experiments and theory support the concept of narrow (about 1 nm) pathways in which fast diffusion occurs by a point defect mechanism. In ionic compounds, however, experiments have indicated that in some materials grain boundary diffusion is faster in the bulk whereas in others it is slower. Furthermore, different workers have reached different conclusions in, ostensibly, the same materials. The possible reasons for this lack of convergence are discussed.

In the author's opinion no satisfactory link between interface structure and mass transport has yet been established in any material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 122: Symposium I – Interfacial Structure, Properties, and Design , 1988 , 183
Copyright
Copyright © Materials Research Society 1988

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References

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