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Interfacial Atomic Structures During Cobalt Silicidation

Published online by Cambridge University Press:  25 February 2011

A. Catana  and
P.E. Schmid
A. Catana
Affiliation:
IBM Research Division, Zürich Research Lab, 8803 Rüschlikon, Switzerland
P.E. Schmid
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology 1015 Lausanne, Switzerland
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Abstract

High Resolution Electron Microscopy (HREM) and image calculations are combined to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. The samples are prepared by UHV e-beam evaporation of Co layers (2 nm) followed by annealing at 300°C or 400°C. Cross-sectional observations at an atomic scale show that the silicidation of Co at the lower temperature yields epitaxial CoSi/Si domains such that [111]Si // [111]CoSi and <110>Si // <112>CoSi. At about 400°C CoSi2 nucleates at the CoSi/Si interface. During the early stages of this chemical reaction, an epitaxial CoSi/CoSi2/Si system is observed. The predominant orientation is such that (021) CoSi planes are parallel to (220) CoSi2 planes, the CoSi2/Si interface being of type B. The growth of CoSi2 is shown to proceed at the expense of both CoSi and Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 659
Copyright
Copyright © Materials Research Society 1991

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References

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