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Interface Strain and the Valence Band Offset at the Lattice Matched In0.53Ga0.47As/InP (001) Interface

Published online by Cambridge University Press:  25 February 2011

Mark S. Hybertsen
Mark S. Hybertsen*
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

Total energy minimization calculations show that the interface bonds are strained in nominally lattice matched In0.53 Ga0.47As/InP (001) heterostructures, in agreement with recent X-ray measurements. Anion intermixing relieves the interface strain. The calculated valence band offset varies with the interface bond lengths so the minimum energy structure must be used for a given composition. Then the calculated offset is independent of composition and is in good agreement with experiment. A simple model exhibits the qualitative features revealed by these calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 109
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] See, for example, Heterojunction Band Discontinuities:Physics and Applications edited by Capasso, F. and Margaritondo, G. (North-Holland, New York, 1987).Google Scholar
[2] One finds dInAs=1.514 Å, dlnp=1.467 Å, and dMp=1.418 A resulting in ε=0.032 based on data from Zahlenwerte und Funktionen aus Naturwissenshaften und Technik, Vol III of Landolt-Bornstein, edited by Hellwege, K.H. (Springer, New York, 1982), Vol. 17a.Google Scholar
[3] Vandenberg, J.M., et al., Appl. Phys. Lett. 53, 1920 (1988).Google Scholar
[4] Forrest, S.R., et al., Appl. Phys. Lett. 45, 1199 (1984). S.R. Forrest in Ref. 1.Google Scholar
[5] Cavicchi, R.E., et al., Appl. Phys. Lett. 54, 739 (1989); D.V. Lang in Ref. 1.Google Scholar
[6] Haase, M.A., Pan, N., and Stillman, G.E., Appl. Phys. Lett. 54, 1457 (1989).Google Scholar
[7] Hohenberg, P. and Kohn, W., Phys. Rev. 136, B864 (1964); W. Kohn and L.J. Sham, Phys. Rev. 140, A1133 (1965). Correlation data: D.M. Ceperley and B.I. Alder, Phys. Rev. Lett. 45, 566 (1980) as parameterized in J.P. Perdew and A. Zunger Phys. Rev. B 23, 5048 (1981).Google Scholar
[8] Kerker, G.P., J. Phys. C 13, L189 (1980). S.G. Louie, S. Froyen and M.L. Cohen, Phys. Rev. B 26, 1738 (1982).Google Scholar
[9] The spin-orbit splitting, estimated from experiment (Ref. 2), contributes 84 meV to the band offset.Google Scholar
[10] Zhang, S.B., et al., Solid State Commun. 66, 585 (1988).Google Scholar
[11] The bare exchange contribution is calculated directly while the correlation contribution is estimated from detailed calculations [Zhu, X.-J. and Louie, S.G., private communication] for GaAs, InAs, and InP.Google Scholar
[12] Gershoni, D., et al., Phys. Rev. B 39, 5531 (1989).Google Scholar
[13] Harrison, W.A., et al., Phys. Rev. B 18, 4402 (1978)Google Scholar