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Interface Stability During Solid Phase Epitaxy Of Strained Ge xS1-x Films on Si (100)

Published online by Cambridge University Press:  15 February 2011

Xiaobiao Zeng ,
Tan-Chen Lee ,
John Silcox  and
Michael O. Thompson
Xiaobiao Zeng
Affiliation:
Department Of Materials Science And Engineering, Cornell University, Ithaca, Ny 14853
Tan-Chen Lee
Affiliation:
Department Of Materials Science And Engineering, Cornell University, Ithaca, Ny 14853
John Silcox
Affiliation:
Department Of Materials Science And Engineering, Cornell University, Ithaca, Ny 14853
Michael O. Thompson
Affiliation:
Department Of Materials Science And Engineering, Cornell University, Ithaca, Ny 14853
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Abstract

Strained solid phase epitaxial (SPE) regrowth of amorphous Ge xSi1-x on Si (100) substrates was studied using time-resolved reflectivity(TRR). Films of CVD-grown Ge0.13Si0.87 on Si wereamorphized by Si ion implantation, and subsequently regrown at temperaturesbetween 550°C and 610°. Information on regrowth dynamics and interfaceroughness evolution was obtained by accurately modeling the complicated TRRdata for Ge xSi1-x regrowth using a Moving, statistically roughening interface. The SPEregrowth rate slowed as the interface crossed into the Ge xSi1-x layer and the originally planar interface roughened, as confirmed bytransmission electron Microscopy. A Minimum in the regrowth velocity wasobserved after regrowing approximately 60 nm into the Ge xSi1-x layer; the SPE rate subsequently increased to a final,thickness-dependent velocity that was still below that for pure Si. Uponentering the Ge xSi1-x layer, the interface roughened quickly to a 15–20 nm amplitude,increasing only slightly more during the remainder of regrowth. The degreeof roughening and velocity reduction was found to be dependent on the annealtemperature. In contrast, samples with low Ge concentrations (< 3 at.%)prepared by ion implantation exhibited minimal interface roughening andessentially identical SPE velocities as pure Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 503
Copyright
Copyright © Materials Research Society 1994

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References

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