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Interface roughness, Localization and Radiative Efficiency in InGaN/GaN light emitters

Published online by Cambridge University Press:  21 March 2011

Madhusudan Singh  and
Jasprit Singh
Madhusudan Singh
Affiliation:
Department of Electric at Engineering and Computer Science University of Michigan, Ann Arbor, MI 48109
Jasprit Singh
Affiliation:
Department of Electric at Engineering and Computer Science University of Michigan, Ann Arbor, MI 48109
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Abstract

Quantum wells based in InGaN and GaN have been actively studied over the past serveral years for light emission. It has been seen that in spite of substrate mismatch related dislocation densities of ~107–108 cm-2, one can have reasoable quantum efficiencies in these quantum w ells. In this paper, w ewill explore ho wearrier localization influences radiative efficiency in InGaN/GaN quantum wells. Analysis is done about the relative effects of in terface roughness and effectof potential modification owing to alloy fluctuation in InGaN. This is necessary as InGaN has a large miscibility gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.40.1
Copyright
Copyright © Materials Research Society 2002

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References

[1] Zhang, Y. and Singh, J., Applied Phys. Lett. 73 (1998).Google Scholar
[2] Zhang, Y. and Singh, J., J. Appl. Phys. 85 (1999).Google Scholar
[3] Lee, J. I., Brini, J., Chovet, A., and Dimitriadis, C.V., Solid State Electronics 43, 2181 (1999).Google Scholar
[4] Levinshtein, M. E., Rumyantsev, S. L., Look, D. C., Molnar, R. J., Khan, M. A., Simin, G., Adivarahan, V., and Shur, M. S., Journal of Applied Phys. 86 (1999).Google Scholar
[5] Rumyantsev, S. L., Look, D. C., Levinshtein, M. E., Khan, M. A., Simin, G., Adivarahan, V., and Molnar, R. J., Shur, M. S., Materials Science Forum 338–342 (2000).Google Scholar
[6] Ho, I-hsiu and Stringfellow, G.B., Applied Phys. Lett. 69 (1996)Google Scholar
[7] Matsuoka, T., Applied Phys. Lett. 71 (1997).Google Scholar
[8] Singh, M., Zhang, Y., Singh, J., and Mishra, U., Applied Phys. Lett. 77, 1867 (2000).Google Scholar