Article contents
Interface Roughness in Strained Si/SiGe Multilayers
Published online by Cambridge University Press: 03 September 2012
Abstract
Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(OOl) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA), we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1997
References
- 1
- Cited by