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Interface Reactions In Tasi 2/Si Contacts at High Temperature

Published online by Cambridge University Press:  22 February 2011

H. Oppolzer ,
F. Neppl  and
K. Hieber
H. Oppolzer
Affiliation:
Siemens AG, Research Laboratories, Munich, Otto-Hahn-Ring 6, Fed. Rep., Germany
F. Neppl
Affiliation:
Siemens AG, Research Laboratories, Munich, Otto-Hahn-Ring 6, Fed. Rep., Germany
K. Hieber
Affiliation:
Siemens AG, Research Laboratories, Munich, Otto-Hahn-Ring 6, Fed. Rep., Germany
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Abstract

The influence of deviations from TaSi2 stoichiometry in co-sputtered,amorphous Ta-Si films on interface reactions in contacts to silicon at 900°C was investigated by TEM of thin cross sections through the contact windows. Excess silicon precipitates epitaxially in the contacts, pits are formed for silicon deficiency. The involved lateral silicon transport ranges over several tens of microns. The effects of interfacial oxides and a crystalline TaSi 2 pad layer were studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 593
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Murarka, S.P., Fraser, D.B., Sinha, A.K. and Levinstein, H.L., IEEE Trans. Electron Devices ED–27, 1409–1417 (1980)Google Scholar
2. Tu, K.N. and Mayer, J.W. in: Thin Films - Interdiffusion and Reactions, Poate, J.M., Tu, K.N. and Mayer, J.W., eds. (Wiley, New York 1978)Google Scholar
3. Nicolet, M.A. and Lau, S.S. in: VLSI Electronics Vol. 6, Einspruch, N.G. and Larrabee, G.B., eds. (Academic Press, New York 1983)Google Scholar
4. Tu, K.N., J. Vac. Sci. Technol. 19, 766–777 (1981)Google Scholar
5. Föll, F., Ho, P.S. and Tu, K.N., J. Appl. Phys. 52, 250–255 (1983)Google Scholar
6. Oppolzer, H. and Huber, V., Proc. 3. Microscopy Semicond. Materials Conf. (Oxford 1983) Inst. Phys. Conf. Ser., in pressGoogle Scholar
7. Henghuber, G., Oppolzer, H. and Schild, S., Siemens Forsch. - und Entwickl.- Ber. 9, 363–366 (1980)Google Scholar
8. Oppolzer, H. and Knauer, U., Scanning Electron Microscopy 1979/I (AMF O'Hare, IL 60666: SEM Inc.) 111 – 120Google Scholar
9. Zheng, L.R., Hung, L.S. and Mayer, J.W., J. Vac. Sci. Technol. A1, 758–761 (1983)Google Scholar
10. Hoffmann, H., Schober, K. and Knapek, E., to be publishedGoogle Scholar
11. Pawlik, D., Oppolzer, H. and Criegern, R. v., to be publishedGoogle Scholar
12. d'Heurle, F.M. in: VLSI Science and Technology / 1982, Dell'Oca, C., and Bullis, W.M., eds. (The Electrochemical Society, Pennigton 1982) pp. 194–212 Google Scholar