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Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In0.15Ga0.85As substrates

Published online by Cambridge University Press:  31 January 2011

Alessandro Molle ,
Guy Brammertz ,
Luca Lamagna ,
Sabina Spiga ,
Marc Meuris  and
Marco Fanciulli
Alessandro Molle
Affiliation:
[email protected], CNR-INFM, Laboratorio Nazionale MDM, Agrate Brianza, Italy
Guy Brammertz
Affiliation:
[email protected], IMEC, Leuven, Belgium
Luca Lamagna
Affiliation:
[email protected], CNR-INFM, Laboratorio Nazionale MDM, Agrate Brianza, Italy
Sabina Spiga
Affiliation:
[email protected], CNR-INFM, Laboratorio Nazionale MDM, Agrate Brianza, Italy
Marc Meuris
Affiliation:
[email protected], IMEC, Leuven, Belgium
Marco Fanciulli
Affiliation:
[email protected], CNR-INFM, Laboratorio Nazionale MDM, Agrate Brianza, Italy
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Abstract

La-doped ZrO2 thin films were grown by O3-based atomic layer deposition on III-V (GaAs, In0.15Ga0.85As) substrates. The direct oxide deposition and the insertion of a Ge passivation layer in between the oxide and the substrate are compared in terms of the resulting density of interface traps. An improved electrical quality of the Ge-passivated interfaces concerning the energy region close to the conduction band edge in the semiconductor band-gap is demonstrated through conductance maps at various temperatures and it is attributed to Ga-related interfacial defects.

Keywords

microelectronicsatomic layer depositionpassivation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1194: Symposium A – High-k Dielectrics on Semiconductors with High Carrier Mobility , 2009 , 1194-A08-10
Copyright
Copyright © Materials Research Society 2010

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