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Interface Morphology of Metallic Multilayers by Means of Deposition Simulation

Published online by Cambridge University Press:  01 February 2011

Kazuhito Shintani ,
Y. Kometani ,
T. Nakajima  and
Y. Yano
Kazuhito Shintani
Affiliation:
[email protected], University of Electro-Communications, Department of Mechanical Engineering and Intelligent Systems, 1-5-1 Chofugaoka, Chofu, 182-8585, Japan, 81-424-43-5393, 81-424-84-3327
Y. Kometani
Affiliation:
[email protected], University of Electro-Communications, Department of Mechanical Engineering and Intelligent Systems, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
T. Nakajima
Affiliation:
[email protected], University of Electro-Communications, Department of Mechanical Engineering and Intelligent Systems, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
Y. Yano
Affiliation:
[email protected], University of Electro-Communications, Department of Mechanical Engineering and Intelligent Systems, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
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Abstract

Growth of a Co/Cu/Co multilayer is investigated by molecular-dynamics simulation. The interactions between Co and Cu atoms are calculated in terms of the generic-embedded atom method potential. It is confirmed that two-dimensional island growth of Cu atoms on the Co substrate occurs in the simulations. The roughnesses of the surface and the interface are evaluated by means of the standard deviations of the heights of the surface and interface atoms. Intermixing atoms between the layers are also counted. We conclude that there exists an optimum combination of the incident energies of deposited Cu and Co atoms which minimizes both the roughness and intermixing of the interface.

Keywords

thin filmepitaxymagnetoresistance (magnetic)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 962: Symposium P – Nanoscale Magnets – Synthesis, Self-Assembly, Properties and Applications , 2006 , 0962-P09-03
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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