Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T15:30:03.669Z Has data issue: false hasContentIssue false

Interface Formation Between Silver and Pentacene: A Photoemission Spectroscopy Study

Published online by Cambridge University Press:  21 March 2011

Neil J. Watkins
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, U.S.A.
Quoc Toan Le
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, U.S.A.
Serkan Zorba
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, U.S.A.
Li Yan
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, U.S.A.
Yongli Gao
Affiliation:
Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, U.S.A.
Get access

Abstract

We report the interface formation between silver (Ag) and pentacene, an organic material used as an active material in organic thin-film transistors, using x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). XPS results indicate that silver does not chemically react with pentacene regardless of the deposition order. We see that neither pentacene nor silver exhibited simple layer by layer growth when deposited on the other. UPS results show that a dipole forms as pentacene is deposited on silver.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsumura, A., Koezuka, H., and Ando, T., Appl. Phys. Lett. 48, 1210 (1986).Google Scholar
2. Horowitz, G., Adv. Mater. 10, 365 (1998).Google Scholar
3. Katz, H. E. and Bao, Z., J. Phys. Chem. B 104, 671 (2000).Google Scholar
4. Lin, Y. Y., Gundlach, D. J., Nelson, S. F., and Jackson, T. N., IEEE Trans. Elect. Devices 44, 1325 (1997).Google Scholar
5. Jackson, T. N., Lin, Y. Y., Gundlach, D. J., and Klauk, H., IEEE J. Sel. Topics in Quant. Elect. 4, 100 (1998).Google Scholar
6. Gundlach, D. J., Lin, Y. Y., Jackson, T. N., Nelson, S. F., and Schlom, D. G., IEEE Elect. Device Lett. 18, 87 (1997).Google Scholar
7. Lin, Y. Y., Gundlach, D. J., Nelson, S. F., and Jackson, T. N., IEEE Elect. Device Lett. 18, 606 (1997).Google Scholar
8. Dimitrakopoulos, C. D., Purushothaman, S., Kymissis, J., Callegari, A., and Shaw, J. M., Science 283, 822 (1999).Google Scholar
9. Schön, J. H., Berg, S., Kloc, Ch., and Batlogg, B., Science 287, 1022 (2000).Google Scholar
10. Meyer, F. Heringdorf, zu, Dimitrakopoulos, C., Shaw, J., Tromp, R.M., presented at 2000 MRS Fall Meeting, JJ 7.4, (2000).Google Scholar