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Interface Engineering of Chalcogenide Semiconductors in Thin Film Solar Cells: CdTe as an Example

Published online by Cambridge University Press:  21 March 2011

J. Fritsche
Affiliation:
Department of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt, Germany
D. Kraft
Affiliation:
Department of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt, Germany
A. Thissen
Affiliation:
Department of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt, Germany
Th. Mayer
Affiliation:
Department of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt, Germany
A. Klein
Affiliation:
Department of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt, Germany
W. Jaegermann
Affiliation:
Department of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt, Germany
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Abstract

In this paper the electronic properties of the different interfaces of CdTe thin film solar cells will be analysed by using a surface science approach. Experimental basis for the experiments is an integrated UHV systems which allows to prepare and analyse real solar cells as well as appropriate model interfaces. Recently obtained data on the ITO surface, the ITO/SnO2/CdS front contact, the CdS/CdTe heterojunction and the CdTe/Te back contact will be presented. In addition, bulk properties as doping and lateral inhomogeneities will be addressed. For all these interfaces experimentally determined band energy diagrams will be given and discussed in relation to solar cell performance. Finally, the sum of the results will be used to propose a modified band energy diagram of the complete CdTe thin film solar cell and its implication for further cell improvement will be presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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