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Interdiffusion of Bi and Sb in Superlattices Built from Blocks of Bi2Te3, Sb2Te3 and TiTe2

Published online by Cambridge University Press:  31 January 2011

Clay D. Mortensen  and
David Johnson
Clay D. Mortensen
Affiliation:
[email protected], University of Oregon, Department of Chemistry and Materials Science Institute, Eugene, Oregon, United States
David Johnson
Affiliation:
[email protected], University of Oregon, 1253 University of Oregon, Eugene, Oregon, 97403-1253, United States
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Abstract

The reaction kinetics of [(Ti-Te)]x[(Sb-Te)]y, [(Bi-Te)]x[(Sb-Te)]y, [(Ti-Te)]w[(Bi-Te)]x and [(Ti-Te)]w[(Bi-Te)]x[(Ti-Te)]y[(Sb-Te)]z precursors as a function of annealing temperature and time was probed using x-ray diffraction techniques to define the parameters required to form superlattice structures. [(TiTe2)1.36]x[Sb2Te3]y and [(TiTe2)1.36]x[Bi2Te3]y superlattices were observed to form while [(Bi-Te)]x[(Sb-Te)]y precursors yielded only Bi2-xSbxTe3 alloys. This behavior was correlated with the immiscibility/miscibility of the constituents of the targeted superlattices. For the three component system, Bi and Sb were observed to interdiffuse through the Ti-Te layer over the range of Ti-Te thicknesses explored, resulting in formation of (BixSb1-x)2Te3 alloys within the superlattice structure. When the Bi2Te3 and Sb2Te3 thicknesses were equal, symmetric [{(TiTe2)}1.36]w[(Bi0.5Sb0.5)2Te3]y superlattices were formed.

Keywords

thermoelectricthin filmchemical synthesis
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1166: Symposium N – Materials and Devices for Thermal-to-Electric Energy Conversion , 2009 , 1166-N02-02
Copyright
Copyright © Materials Research Society 2009

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References

1 Shen, J., Kirschner, J., Surf. Sci. 500, 300 (2002)10.1016/S0039-6028(01)01557-6Google Scholar
2 Cahill, D. G., Ford, W. K., Goodson, K. E., Mahan, G. D., Majumdar, A., Maris, H. J., Merlin, R., Phillpot, S. R., Journal of Applied Physics 93 (2), 793 (2003).Google Scholar
3 Venkatasubramanian, R., Siivola, E., Colpitts, T., O'Quinn, B., Nature, 413, 597 (2001).Google Scholar
4 Lee, H. N., Christen, H. M., Chisholm, M. F., Rouleau, C. M., Lowndes, D. H., Nature 433, 395 (2005).10.1038/nature03261Google Scholar
5 Nakhmanson, S. M., Rabe, K. M., Vanderbilt, D., Appl. Phys Phys. Lett. 87, 102906 (2005).10.1063/1.2042630Google Scholar
6 Landi, S. M., Tribuzy, C. V., Souza, P. L., Butendeich, R., Bittencourt, A. C., Marques, G. E., Phys. Rev. B: Condensed Matter and Materials Physics 67 (8), 085304/1-085304/10 (2003).10.1103/PhysRevB.67.085304Google Scholar
7 Hashemi, P., Gomez, L., Hoyt, J. L., Robertson, M. D., Canonico, M., Appl. Phys. Lett. 91 (8), 083109/1-083109/3 (2007).10.1063/1.2772775Google Scholar
8 Seravalli, L., Frigeri, P., Minelli, M., Allegri, P., Avanzini, V., Franchi, S., Appl. Phys. Lett. 87 (6), 063101/1-063101/3 (2005).Google Scholar
9 Norman, A. G., Seong, T. Y., Ferfuson, I. T., Booker, G. R., Joyce, B. A., Semicond. Sci. technol. 8, S9 (1993).Google Scholar
10 Takahasi, M., Mizuki, J., J. Cryst. Growth 275, 2201 (2005).10.1016/j.jcrysgro.2004.11.241Google Scholar
11 Harris, F. R., Standridge, S., Johnson, D. C., J Am Chem Soc, 127, 7843 (2005).Google Scholar
12 Harris, F. R., Standridge, S., Feik, C., Johnson, D. C., Angewandte Chemie Int. Ed. 42(43), 5296 (2003).10.1002/anie.200351724Google Scholar
13 Donovan, J. J., Tingle, T. N., J. Microscopy, 2, 1 (1996).Google Scholar
14 Pouchou, J. L. and Pichoir, F., Scanning 12, 212 (1990).Google Scholar
15 Pouchou, J. L., Pichoir, F., and Boivin, D., Microbeam Analysis, San Francisco Press: San Francisco, 120 (1990).Google Scholar