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Interdiffusion Behavior of Si/Si1−x Gex. Layers in Inert and Oxidizing Ambients

Published online by Cambridge University Press:  10 February 2011

Michelle Griglione ,
Tim Anderson ,
Yaser Haddara ,
Mark Law  and
Kevin Jones
Michelle Griglione
Affiliation:
Department of Chemical Engineering, University of Florida
Tim Anderson
Affiliation:
Department of Chemical Engineering, University of Florida
Yaser Haddara
Affiliation:
Department of Electrical and Computer Engineering, University of Florida
Mark Law
Affiliation:
Department of Electrical and Computer Engineering, University of Florida
Kevin Jones
Affiliation:
Department of Materials Science and Engineering, University of Florida
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Abstract

Interdiffusion of Si/Si0.85Ge0.15 heterojunctions subjected to annealing in inert and oxidizing ambients was investigated as a function of temperature (900 to 1200 °C) and time, allowing comparison between intrinsic diffusion and diffusion under interstitial injection. The Ge diffusivity was extracted using the process simulation program FLOOPS. A time-independent diffusivity was observed for all temperatures. The calculated Ge diffusivity in oxidizing ambient was comparable to that in inert ambient indicating that the interstitial concentration plays a minimal role in interdiffusion. A fractional interstitial component, f1, equal to 0.10 is estimated for annealing temperatures in the range 900 to 1100 °C, while f1 increases to approximately 0.17 at 1200 °C. This may indicate a change in diffusion mechanism at a temperature greater than 1100 °C

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 119
Copyright
Copyright © Materials Research Society 1998

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References

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