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Interactions of Point Defects and Impurities With Open Volume Defects in Silicon

Published online by Cambridge University Press:  17 March 2011

J.S. Williams ,
M.C. Ridgway ,
M.J. Conway ,
J. Wong-Leung ,
B.C. Williams ,
M. Petravic ,
F. Fortuna ,
M.-O. Ruault  and
H. Bernas
J.S. Williams
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia
M.C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia
M.J. Conway
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia
J. Wong-Leung
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia
B.C. Williams
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia
M. Petravic
Affiliation:
Department of Electronic Materials Engineering, RSPhysSE, Australian National University, Canberra, 0200, Australia
F. Fortuna
Affiliation:
Centre de Spectrometrie Nucleaire et Spectrometrie de Masse, CNRS-IN2P3, Batiment 108-F- 91405 Orsay, France
M.-O. Ruault
Affiliation:
Centre de Spectrometrie Nucleaire et Spectrometrie de Masse, CNRS-IN2P3, Batiment 108-F- 91405 Orsay, France
H. Bernas
Affiliation:
Centre de Spectrometrie Nucleaire et Spectrometrie de Masse, CNRS-IN2P3, Batiment 108-F- 91405 Orsay, France
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Abstract

Ion implantation can produce open volume defects in silicon by one of two methods, either by H or He implantation followed by annealing to create a band of nanocavities and also by direct implantation to reasonably high doses, which results in a vacancy excess region at depths less than about half the projected ion range. This paper reviews three interesting aspects of open volume defects. In the first case, the very efficient gettering of fast diffusing metals to nanocavities formed by H-implantation is illustrated. In addition, the non-equilibrium behaviour of Cu3Si precipitation and dissolution at cavities is examined. The second example treats the interaction of irradiation-induced defects with nanocavities, particularly preferential amorphisation at open volume defects and subsequent cavity shrinkage. The final example illustrates the coalescence of excess vacancies into small voids on annealing and the use of gettering of Au to detect such open volume defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O2.4
Copyright
Copyright © Materials Research Society 2001

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