Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-20T02:34:47.083Z Has data issue: false hasContentIssue false
  • English
  • Français

Interactions in and Interfacial Structure of Annealed Co / a-Si3N4 Studied by Hrtem

Published online by Cambridge University Press:  22 February 2011

Tai D. Nguyen ,
Tue Nguyen ,
Herbert L. Ho  and
Ronald Gronsky
Tai D. Nguyen
Affiliation:
Center for X-Ray Optics, MS 2–400, Lawrence Berkeley Laboratory, Berkeley, CA 94720. Department of Materials Science and Mineral Engineering, and Applied Science & Technology, University of California, Berkeley, CA 94720.
Tue Nguyen
Affiliation:
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533.
Herbert L. Ho
Affiliation:
IBM Semiconductor Research and Development Center, Hopewell Junction, NY 12533.
Ronald Gronsky
Affiliation:
Department of Materials Science and Mineral Engineering, and Applied Science & Technology, University of California, Berkeley, CA 94720.
Get access

Abstract

Interactions between Co and a-Si3N4 films during Rapid Thermal Anneal (RTA) in N2 and Ar ambients, and during vacuum anneal, have been studied using plan-view and cross-sectional Transmission Electron Microscopy (TEM). Annealing in the temperature range 600–1000°C reveals agglomeration of the 12.5 nm Co layer and partial exposure of the nitride layer to the surface. Morphological damage of the Co/Si3N4 interface, and diffusion of Co into the nitride layer and possibly to the Si substrate, were observed after high temperature anneals. Phases of Co and CoSi2 were identified from the plan-view electron diffaction patterns. The Co/Si3N4 interaction seems to occur at lower temperature when annealed in vacuum. The microstructures and morphology of the layers and interfaces are presented. The mechanism for the diffusion of Co into the nitride layer is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 57
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lu, C.Y., Sung, J.J., Liu, R., Tsai, N., Singh, R., Hillenius, S.J., and Kirsch, H.C., IEEE Trans. Elec. Dev. 38 (1991) 246.Google Scholar
2. Broadbent, E.K., Irani, R.F., Morgan, A.E., and Maillot, P., IEEE Trans. Elec. Dev. 36 (1989) 2440.Google Scholar
3. Singh, A. and Khokle, W.S., Microelec. Jour. 20 (1989) 11.Google Scholar
4. Burte, E.P. and Ye, M., J. Mat. Res. 6 (1991) 1892.Google Scholar
5. Liu, R., Williams, D.S., and Lynch, W.T., IEDM Tech. Dig. (1986) 58.Google Scholar
6. Edelman, F., Gutmanas, E.Y., and Brenner, R., Vac. 41 (1990) 1268.Google Scholar
7. Nguyen, T., Ho, H.L., Kotecki, D.E., and Nguyen, T.D. (submitted to J. Mat. Res.).Google Scholar
8. Nguyen, T.D., Gronsky, R., and Kortright, J.B., J. Elec. Micros. Tech. 19 (1991) 473.Google Scholar
9. Nguyen, T. and Ho, H.L., Elect. Chem. Soc. Fall 1992 Meeting Extended Abstract (Toronto, Canada, Oct. 1992).Google Scholar
10. Pretorious, R., Hanis, J.M., and Nicolet, M.A., Solid State Elec. 21 (1978) 667.Google Scholar
11. Chen, W.D., Cui, Y.D., and Hsu, C.C., J. Appl. Phys. 69 (1991) 7612.Google Scholar
12. Ho, H. L., Nguyen, T., Chang, J.C., Machesney, B., and Geiss, P., to appear in J. Mat. Res. (1993).Google Scholar