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The Interaction of Liquid and Vapor Water with Nearly Defect-Free and Defective TiO2(100) Surfaces

Published online by Cambridge University Press:  10 February 2011

Li-Qiong Wang
Affiliation:
Materials and Chemical Sciences Center
P. X. Skiba
Affiliation:
Austin Peay State University, Clarksville, TN
A. N. Shultz
Affiliation:
Oregon State Univ., Corvallis, OR.
Don R. Baer
Affiliation:
Environmental Molecular Science Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352, [email protected]
Mark H. Engelhard
Affiliation:
Environmental Molecular Science Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352, [email protected]
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Abstract

The interaction of both liquid and vapor water on nearly defect-free and defective TiO2(100) surfaces has been investigated using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). The study has focused on examining electronic or chemical defects as created in vacuum and after exposure to both liquid and vapor water. Defective surfaces were prepared by electron-beam exposure and Ar+ bombardment. For a nearly defect-free (100)1×1 surface, water coverage was ∼0.02 ML (1ML = 2.9×1015/cm2) at 104 L exposure to low vapor pressure water, ∼0.08 ML at 108 L exposure to higher vapor pressure water, and ∼0.12 ML with liquid water exposure, respectively. Defect intensities were greatly reduced after exposing defective surfaces to ∼102 L low vapor pressure water. More significantly, electron-beam induced defects were completely removed upon higher-pressure vapor exposure (>104 L) or liquid water exposure, while defects created by Ar+ bombardment were only partially removed. The adsorption behavior and surface defect reactivity for TiO2(100) 1×1 surfaces were compared with those for TiO2(110) surfaces. The adsorption rates for nearly defect-free (100) 1×1 and (110) surfaces are comparable. However, the rate of defect “healing” for a defective (100) surface is much faster than that for a defective (110) surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

[1] Fujushima, A. and Honda, K., Nature 238, 37 (1972).Google Scholar
[2] Henrich, V.E., Dresselhaus, G., Zeiger, H.J., Solid State Commun. 24, 623 (1977).Google Scholar
[3] Pan, J.M., Maschhoff, B.L., Diebold, U., and Madey, T.E., J. Vac. Sci. Technol. A 10, 2470 (1992).Google Scholar
[4] Bustillo, F.J., Roman, E., and de Segovia, J.L., Vacuum, 41, 19 (1990).Google Scholar
[5] Bustillo, F.J., Roman, E., and de Segovia, J.L., Vacuum, 39, 659(1989).Google Scholar
[6] Eriksen, S., Naylor, P.D., and Egdell, R.G., Spectrochim. Acta. 43A, 1535 (1987).Google Scholar
[7] Lo, W.J., Chung, Y.W., and Somorjai, G.A., Surf. Sci. 71, 199 (1978).Google Scholar
[8] Chung, Y.W., Lo, W.J., and Somorjai, G.A., Surf. Sci. 64, 588 (1977).Google Scholar
[9] Smith, P.B. and Bernasck, S.L., Surf. Sci. 188, 241 (1987).Google Scholar
[10] Muryn, C.A., Hardman, P.J., Crouch, J.J., Raiker, G.N., Thornton, G. and Law, D.S.-L., Surf. Sci. 251/252, 747 (1991).Google Scholar
[11] Henrich, V.E., Progr. Surface Sci. 9, 143 (1979); Rept. Progr. Phys. 48, 1481 (1986).Google Scholar
[12] Wang, L.Q., Baer, D.R., Engelhard, M.H., and Shultz, A.N., Surf. Sci. 344, 237 (1995).Google Scholar
[13] Henderson, M., Surf. Sci. 319, 315 (1994).Google Scholar
[14] Hugenschmidt, M.B., Gamble, L., Campbell, C.T., Surf. Sci. 302, 329 (1994).Google Scholar
[15] Kurtz, R.L., Stockbauer, R., Madey, T.E., Roman, E., and Segovia, J.L., Surf. Sci. 218, 178 (1989).Google Scholar
[16] Lazarus, M.S. andSham, T.K. and Chem. Phys. Letters 92, 670 (1982).Google Scholar
[17] Sham, T.K. and Lazarus, M.S., Chem. Phys. Letters 68, 426 (1979).Google Scholar
[18] Lu, G., Linsebigler, A., and Yates, J.T., J. Phys. Chem. 98, 11733 (1994).Google Scholar
[19] Wang, L.Q., Shultz, A.N., Baer, D.R., and Engelhard, M.H., J. Vac. Sci. Techno. A, in pressGoogle Scholar
[20] Wang, L.Q., Baer, D.R., and Engelhard, M.H., Surf. Sci. 320, 295 (1994).Google Scholar